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LMV331 bảng dữ liệu(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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LMV331 bảng dữ liệu(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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3 / 6 page ![]() Functional Description Inputs IN(-) > IN(+) IN(+) > IN(-) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions reliability.The absolute maximum ratings are stress ratings only. Symbol Parameter VDD to VSS SupplyVoltage DVIN Differential InputVoltage VIN InputVoltage TJ Junction Temperature TSTG Storage Temperature Range PD Power Dissipation Note:The maximum total power dissipation must not be exceeded. Outputs Output LOW Output HIGH Figure 3. VIN vs. VOUT Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions The absolute maximum ratings are stress ratings only. Parameter Min. Max. SupplyVoltage Differential InputVoltage InputVoltage VSS Junction Temperature -40 Storage Temperature Range -55 +1 Power Dissipation The maximum total power dissipation must not be exceeded. Outputs Output LOW Output HIGH damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device Max. Unit 8.0 V ±8 SS to VDD V +85 °C +125 °C 220 mW LMV331 |
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