© 2008 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev. 1.1.0

1

July 2013

FJB3307D

High-Voltage Fast-Switching NPN Power Transistor

Features

• Built-in Diode between Collector and Emitter

• Suitable for Electronic Ballast and Switch-Mode Power Supplies

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Note:

1. Pulse test: pulse width = 300µs, duty cycle = 2% pulsed.

Part Number

Marking

Package

Packing Method

FJB3307DTM

J3307D

Tape and Reel

Symbol

Parameter

Value

Units

Collector-Base Voltage

700

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

9

V

Collector Current (DC)

8

A

(1)

Collector Current (Pulse)

16

A

Base Current (DC)

4

A

(1)

Base Current (Pulse)

8

A

Junction Temperature

150

°C

Storage Temperature

-55 to 150

°C

Internal Schematic Diagram

B

E

C

1.Base 2.Collector

3.Emitter

1