IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTK80N30L2

IXTX80N30L2

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Terminals: 1 - Gate

2,4 - Drain

3 - Source

TO-264 Outline

2,4 = Drain

3 = Source

b

Q

D

R

E

A

S

R1

x2

b2

b1

A1

L1

3

1

2

L

c

e

4

0P

e

Q1

1

2

3

4

b

C

L

D

R

Q

E

A

A1

L1

D2

D1

E1

A2

3 PLCS

2 PLCS

b4

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

24

36

48

S

C

iss

19.1

nF

C

oss

V

1760

pF

C

rss

490

pF

R

Gi

Integrated Gate Input Resistor

0.88



t

d(on)

40

ns

t

r

180

ns

t

d(off)

174

ns

t

f

67

ns

Q

g(on)

660

nC

Q

gs

V

107

nC

Q

gd

364

nC

R

thJC

0.13 °C/W

R

thCS

0.15

°C/W

Safe Operating Area Specification

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

570

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

80

A

I

SM

Repetitive, pulse Width Limited by T

JM

320

A

V

SD

I

1.4

V

t

rr

485

ns

Q

RM

10

 C

I

RM

42

A

I

V

Resistive Switching Times

V

R