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ADPA7002CHIP bảng dữ liệu(PDF) 15 Page - Analog Devices

tên linh kiện ADPA7002CHIP
Giải thích chi tiết về linh kiện  GaAs, pHEMT, MMIC,1/2 W, Power Amplifier
PDF  23 Pages
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ADPA7002CHIP bảng dữ liệu(HTML) 15 Page - Analog Devices

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Data Sheet
ADPA7002CHIP
Rev. 0 | Page 15 of 23
THEORY OF OPERATION
The architecture of the ADPA7002CHIP, a medium power
amplifier, is shown in Figure 52. The ADPA7002CHIP uses a
cascaded, three-stage amplifier operating in quadrature
between two 90° hybrids.
The input signal is evenly divided into two. Each input signal is
amplified through three independent gain stages and the amplified
signals are combined at the output. This balanced amplifier
approach creates an amplifier with a combined gain of 15 dB
and a PSAT value of 30 dBm.
A portion of the RF output signal is directionally coupled to a
diode to detect the RF output power (see Figure 52). When the
diode is dc biased, the diode rectifies the RF power and makes
the RF power available for measurement as a dc voltage at the
VDET pin. Temperature compensation is accomplished by
referencing a symmetrical diode circuit that is not coupled to
the RF output, which contains a dc voltage output, at the VREF
pin as shown in Figure 56. The difference of VREF − VDET
provides a temperature compensated signal that is proportional
to the RF output.
The 90° hybrids ensure that the input and output return losses
are >12 dB. See the application circuits in Figure 53 and
Figure 54 for further details on biasing the various blocks.
To obtain optimal performance from the ADPA7002CHIP and
avoid damaging the device, follow the recommended biasing
sequences described in the Biasing Procedures section.
Figure 52. Fundamental Cell Schematic
RFIN
RFOUT



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