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ADPA7002CHIP bảng dữ liệu(PDF) 15 Page - Analog Devices |
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ADPA7002CHIP bảng dữ liệu(HTML) 15 Page - Analog Devices |
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15 / 23 page ![]() Data Sheet ADPA7002CHIP Rev. 0 | Page 15 of 23 THEORY OF OPERATION The architecture of the ADPA7002CHIP, a medium power amplifier, is shown in Figure 52. The ADPA7002CHIP uses a cascaded, three-stage amplifier operating in quadrature between two 90° hybrids. The input signal is evenly divided into two. Each input signal is amplified through three independent gain stages and the amplified signals are combined at the output. This balanced amplifier approach creates an amplifier with a combined gain of 15 dB and a PSAT value of 30 dBm. A portion of the RF output signal is directionally coupled to a diode to detect the RF output power (see Figure 52). When the diode is dc biased, the diode rectifies the RF power and makes the RF power available for measurement as a dc voltage at the VDET pin. Temperature compensation is accomplished by referencing a symmetrical diode circuit that is not coupled to the RF output, which contains a dc voltage output, at the VREF pin as shown in Figure 56. The difference of VREF − VDET provides a temperature compensated signal that is proportional to the RF output. The 90° hybrids ensure that the input and output return losses are >12 dB. See the application circuits in Figure 53 and Figure 54 for further details on biasing the various blocks. To obtain optimal performance from the ADPA7002CHIP and avoid damaging the device, follow the recommended biasing sequences described in the Biasing Procedures section. Figure 52. Fundamental Cell Schematic RFIN RFOUT |
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