IXGR40N60C datasheet(2/2 Pages) IXYS

2 / 2 page

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGR 40N60C

IXGR 40N60CD1

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

min.

typ.

max.

= I

T; VCE = 10 V,

Pulse test, t

£ 300 ms, duty cycle £ 2 %

ies

3300

40N60C

310

oes

CE = 25 V, VGE = 0 V, f = 1 MHz 40N60CD1

370

res

116

C = IT, VGE = 15 V, VCE = 0.5 VCES

d(on)

n s

d(off)

100

150

off

0.85

1.70

d(on)

n s

40N60C

0.4

d(off)

40N60CD1

1.2

150

105

off

1.2

thJC

0.6 K/W

thCK

0.15

K/W

Inductive load, T

J = 25°C

C = IT, VGE = 15 V

CE = 0.8 • VCES, RG = Roff = 4.7 W

Remarks: Switching times may increase

for V

CE (Clamp) > 0.8 • VCES, higher TJ or

increased R

Inductive load, T

J = 125°C

C = IT, VGE = 15 V

CE = 0.8 • VCES, RG = Roff = 4.7 W

Remarks: Switching times may increase for

CE (Clamp) > 0.8 • VCES, higher TJ or

increased R

ISOPLUS 247 OUTLINE

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

4.83

5.21

.190 .205

2.29

2.54

.090 .100

1.91

2.16

.075 .085

1.14

1.40

.045 .055

1.91

2.13

.075 .084

2.92

3.12

.115 .123

0.61

0.80

.024 .031

20.80 21.34

.819 .840

15.75 16.13

.620 .635

5.45 BSC

.215 BSC

19.81 20.32

.780 .800

3.81

4.32

.150 .170

5.59

6.20

.220 .244

4.32

4.83

.170 .190

1 Gate, 2 Drain (Collector)

3 Source (Emitter)

4 no connection

ReverseDiode(FRED)(IXGH40N60CD1only)

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

TestConditions

min.

typ. max.

F = IT, VGE = 0 V,

J = 150°C

1.3

Note 1

J =

25°C

1.8

F = IT, VGE = 0 V, VR = 100 V

J = 100°C

7.5

-di

F/dt = 100 A/ms

F = 1 A; -di/dt = 100 A/ms; VR = 30 V

3.5

thJC

0.90 K/W

Note:

1. Pulse test, t

p £ 300 ms, duty cycle:d £ 2 %

2. I

T = 40A

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