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SVRGA0508S bảng dữ liệu(PDF) 8 Page - VPT, Inc. |
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SVRGA0508S bảng dữ liệu(HTML) 8 Page - VPT, Inc. |
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8 / 11 page ![]() Sales Information Phone:(425) 353-3010 Fax: (425) 353-4030 SVFA0515S - 4.0 E-mail: vptsales@vptpower.com Web: www.vptpower.com Page 8 SVFA0515S Series 6.5 RADIATION HARDNESS ASSURANCE VPT takes a conservative approach to radiation testing to ensure product performance in a space environment. VPT’s DLA-approved Radiation Hardness Assurance (RHA) plan documents VPT’s processes and procedures for guaranteeing the performance of VPT products under various environmental conditions in space including Total Ionizing Dose (TID) and Single-Event Effects (SEE). Additionally, Enhanced Low Dose-Rate Sensitivity (ELDRS) effects are considered for all bipolar ICs used in the hybrid. Hardness is guaranteed by a combination of both hybrid-level characterization and Radiation Lot Acceptance Testing (RLAT) of all sensitive semiconductor piece-parts used within the hybrid. 6.5.1 Radiation Test and Performance Levels Radiation Environment Piece Part RLAT Hybrid-Level Characterization Total Ionizing Dose (TID) High Dose Rate (HDR) 40 krad(Si) 40 krad(Si) Low Dose Rate (LDR) 140 krad(Si) 40 krad(Si) Single-Event Effects (SEE) Destructive (SEB, SEGR, SEL) Not applicable ≥ 85 MeV/mg/cm2 Non-Destructive (SET, SEU) Not applicable ≥ 85 MeV/mg/cm2 Displacement Damage (DD) 1x1012 n/cm2 Not applicable 1. Piece-part LDR screening performed only on potentially ELDRS parts (bipolar ICs). 6.5.2 RHA Plan Summary Test RHA Plan for SVL Series Isolated DC-DC Converters Total Ionizing Dose (TID): Sensitive semiconductor components undergo RLAT to 40 krad(Si) per MIL-STD-883 Method 1019. Converters are characterized to 40 krad(Si). Enhanced Low Dose Rate Sensitivity (ELDRS): All bipolar linear ICs are characterized for ELDRS and tested in accordance with MIL-STD-883 test method 1019 section 3.13 Single Event Effects (SEE): Converters are characterized to LET ≥ 85 MeV/mg/cm2 for both catastrophic events (SEL, SEB, SEGR) and functional interrupts (SEFI) under heavy ion exposure. Converters are also characterized for cross-section and magnitude of output transients (SET) for at least 3 different LET levels. Radiation Lot Acceptance Testing (RLAT): All production lots of sensitive semiconductor components undergo RLAT for TID at HDR and/or LDR as appropriate per part type. Displacement Damage (DD): Sensitive semiconductor components undergo RLAT to 1x1012 n/cm2 per MIL-STD-883 Method 1017. 6.5.3 RHA Designators available on SMD The SVFA0515S series converters are available on SMD with RHA level P. See section 8.0 for full SMD number information. 6.5.4 Supporting Documentation Available (Contact Sales) • Radiation Hardness Assurance Plan: DLA-approved RHA plan covering TID, SEE, and ELDRS • Worst-Case Analysis Report: Detailed worst-case analysis including electrical stress/derating limits and guaranteed circuit performance post-radiation and end of life • Radiation Test Summary Report: Overview of piece-part RLAT and hybrid characterization for all guaranteed environments. Also includes SEE cross-section data. • Reliability Report: MTBF report based on MIL-HDBK-217 reliability calculations. • Thermal Analysis Report: Component temperature rise analysis and measurement results. |
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