HM5N30R datasheet(5/10 Pages) HMSEMI

5 / 10 page

0.5

0.75

1.25

1.5

1.75

2.25

2.5

-50

100

150

Tj, Junction temperature , C

Id , Drain Current , Amps

2.5

3.5

4.5

5.5

6.5

Vgs , Gate to Source Voltage , Volts

3.5

2.5

4.5

5.5

Vgs , Gate to Source Voltage , Volts

1.00E-05

100

1.00E-04

Pulse Width , Seconds

1.00E-03

1.00E-02

，

1.00E-01

1.00E+00

1.00E+01

Figure 6 Maximun Peak Current Capability

Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage

and Drain Current

Figure 7 Typical Transfer Characteristics

Figure 10 Typical Drian to Source on Resistance

vs Junction Temperature

Figure 9 Typical Drain to Source ON Resistance

vs Drain Current

TRANSCONDUCTANCE MAY LIMIT

CURRENT IN THIS REGION

FOR TEMPERATURES

ABOVE 25℃ DERATE PEAK

CURRENT AS FOLLOWS:













−

125

150

+150℃

+25℃

-55℃

ID=2A

ID=1A

ID=0.5A

ID=0.25A

VGS=10V

PULSE DURATION = 10μs

DUTY FACTOR = 0.5%MAX

Tc =25 ℃

PULSE DURATION = 10μs

DUTY CYCLE = 0.5%MAX

VDS=30V

PULSE DURATION = 10μs

DUTY CYCLE= 0.5%MAX

Tc =25 ℃

PULSE DURATION = 10μs

DUTY CYCLE= 0.5%MAX

VGS=10V ID=1.5A

Silicon N-Channel Power MOSFET

HM5N30R

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

HM5N30R bảng dữ liệu(PDF) 5 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM5N30R bảng dữ liệu(HTML) 5 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Html Pages

1 2 3 4 5 6 7 8 9 10

bảng dữ liệu tải về

Link URL