© Semiconductor Components Industries, LLC, 2005

October, 2005 − Rev. 3

1

Publication Order Number:

BAT54HT1/D

BAT54HT1

Preferred Device

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1)

Derate above 25

°C

200

1.57

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

635

°C/W

Junction and Storage Temperature

−55

to150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 Minimum Pad

30 VOLT SILICON

HOT−CARRIER DETECTOR

AND SWITCHING DIODES

Device

Package

ORDERING INFORMATION

BAT54HT1

SOD−323

3000/Tape & Reel

SOD−323

CASE 477

Preferred devices are recommended choices for future use

and best overall value.

1

CATHODE

2

ANODE

MARKING DIAGRAM

http://onsemi.com

BAT54HT1G

SOD−323

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

2

JVM

G

G

2

1

JV

= Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)