Features

• High Surge Capability

DO-9 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

S320J (R)

S320K (R)

Unit

Repetitive peak reverse voltage

600

800

V

RMS reverse voltage

420

566

V

DC blocking voltage

600

800

V

Continuous forward current

320

320

A

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

S320J (R)

S320K (R)

Unit

Diode forward voltage

1.2

1.2

10

10

μA

12

12

mA

Thermal characteristics

Thermal resistance, junction -

case

0.16

0.16

°C/W

2. Reverse polarity (R): Stud is anode.

12

A

4700

Reverse current

4700

-55 to 150

S320Q (R)

10

10

S320J thru S320QR

Conditions

S320Q (R)

1000

707

S320M (R)

4700

4700

-55 to 150

320

320

Silicon Standard

Recovery Diode

1200

1000

0.16

0.16

1.2

1.2

12

• Types from 600 V to 1200 V V

RRM

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

S320M (R)

Surge non-repetitive forward

current, Half Sine Wave

-55 to 150

-55 to 150

Conditions

1200

848

C

A

A

C

Stud Stud

(R)

C

A

A

C

Stud Stud

(R)

DO-9 (DO--205AB)

9(DO205AB)

G

A

E

D

H

I

F

B

C

1

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/s320j.pdf