RGA FOR CVD AND ETCH PROCESSES

during etch processes and the chamber clean, passivation sequences, and deposition steps

for various CVD processes including:

Features & Benefits

• Application-specific RGA designed for

continuous in situ monitoring of chemical

vapor deposition (CVD) and etching

processes

— In situ monitoring during chamber

clean, passivation and deposition

to detect subtle changes in low

concentration species and high mass

species decay with respect to time

— Ideal for qualification of new CVD or

Etch process tools or process

sequences

— Enables precision end-point character-

ization and process optimization

— Provides insight into etch rate

variations

— Decreases time to production and time

to ramp

• Baseline monitoring of CVD or Etch

chambers for air leaks and background

contamination levels

• Vacuum troubleshooting for fast PM

recovery

• Can be integrated with a wide variety of

CVD and Etch tools

• Remote Vacuum Controller (RVC) for fail-

safe vacuum operation

• PC-based operation and control

software for

— Data acquisition

— Data interpretation and data recall

— Intelligent alarming of process

excursions

•

Titanium nitride (from TDMAT)

•

Tantalum oxide (from tantalum

precursor)

•

•

HDP of low-k dielectric films

•

Atomic layer CVD (ALD) & atomic layer

epitaxy

•

MOCVD

•

Tungsten and tungsten silicide

•

Reactive ion etching (RIE)

•

Plasma etching

– Metal

– oxide

– Poly

•

High density plasma etching

•

Microwave etching