IRF620 datasheet(3/5 Pages) ARTSCHIP

3 / 5 page

IRL220-223/IRF620-623

MTP7N18/7N20

N-Channel Power Mosfets

7A,150-200V

www.artschip.com

Electrical Characteristics

(Cont.) (TC=25℃ unless otherwise noted)

Symbol

Characteristic

Min

Max

Unit

Test Conditions

On Characteristics

2.0

4.0

VGS(th)

Gate Threshold Voltage

IRF220-223/IRF620-623

MTP7N18/20

2.0

4.5

ID=250µA, VDS=VGS

ID=1mA, VDS=VGS

0.8

1.2

RDS(on)

Static Drain-Source On-Resistance2

IRF220/221/620/621

IRF222/223/622/623

MPT7N18/7N20

0.7

Ω

VGS=10V, ID=2.5A

ID=3.5A

2.45

5.9

VGS=10V; ID=3.5A

VGS=10V; ID=7.0A

VDS(on)

Drain-Source On-Voltage 2

MTP7N18/7N20

5.0

VGS=10V, ID=3.5A

TC=100℃

gfs

Forward Transconductance

1.3

S( )

VDS=10V, ID=2.5A

Dynamic Characteristics

Ciss

Input Capacitance

600

Coss

Output Capacitance

300

Crss

Reverse Transfer Capacitance

VDS=25V, VGS=0V

f=1.0MHz

Switching Characteristics

(TC=25℃, Figure 1,2)

td(on)

Turn-on Delay Time

Rise Time

td(off)

Turn-Off Delay Time

100

Fall Time

VDD=100V, ID=2.5A

VGS=10V, RGEN=50 Ω

RGS=50 Ω

Total Gate Charge

VGS=10V, ID=6.0A

VDD=45V

Symbol

Characteristic

Typ

Max

Unit

Test Conditions

Source-Drain Diode Characteristics

1.8

Is=5.0A; VGS=0V

VSD

Diode Forward Voltage

1.4

IS=4.0A; VGS=0V

trf

Reverse Recovery Time

350

IS=5.0A; dIS/dt=25A/µS

Notes

1. TJ=+25℃ to +150℃

2. Pulse width limited by TJ

3. Switching time measurements performed on LEM TR-58 test equipment.

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