IRFP350

16A,400V,0.300Ohm, N-Channel Power Mosfet

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This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested,

and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power

MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and

drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated

directly from integrated circuits.

Formerly developmental type TA17434.

Features

16A, 400V

Single Pulse Avalanche Energy Rated

SOA is Power Dissipation Limited

Nanosecond Switching Speeds

Linear Transfer Characteristics

High Input Impedance

Related Literature

-TB334 “Guidelines for Soldering Surface Mount Components

to PC Boards”

Ordering information

PART NUMBER

PACKAGE

BRAND

IRFP350

TO-247

IRFP350

NOTE: When ordering, include the entire part number.

Symbol

Packaging