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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IRFP250B bảng dữ liệu(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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IRFP250B bảng dữ liệu(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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1 / 7 page  IRFP250B 200V N-Channel MOSFET www.artschip.com 1 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features 32A, 200V, RDS(on)=0.085Ω@VGS=10V Low gate charge (typical 95nC) Low Crss (typical 75pF) Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol Parameter IRF250B Units VDSS Drain-Source Voltage 200 V 32 A ID Drain Current – Continuous (Tc=25℃) - Continuous (Tc=100℃) 20.3 A IDM Drain Current –Pulse (Note 1) 128 A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 600 mJ IAR Avalanche Current (Note 1) 32 A EAR Repetitive Avalanche Energy (Note 1) 20.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns 204 W PD Power Dissipation (Tc=25℃) - Derate above 25℃ 1.63 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter Typ Max Units R ӨJC Thermal Resistance, Junction-to-Case - 0.61 ℃ /W R ӨCS Thermal Resistance, Case-to-Sink 0.24 - ℃ /W R ӨJA Thermal Resistance, Junction-to-Ambient - 40 ℃ /W |
Số phần tương tự - IRFP250B |
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Mô tả tương tự - IRFP250B |
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