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IRF3205 bảng dữ liệu(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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IRF3205 bảng dữ liệu(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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1 / 7 page ![]() IRF3205 HEXFET ® Power MOSFET www.artschip.com 1 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175℃ Operating Temperature Fast Switching Fully Avalanche Rated VDSS=55V RDS(on)=8.0mΩ ID=110A ⑤ Description Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 packages is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID@TC=25℃ Continuous Drain Current, VGS @ 10V 110⑤ ID@TC=100℃ Continuous Drain Current, VGS @ 10V 80 IDM Pulsed Drain Current ① 390 A PD @ Tc=25℃ Power Dissipation 200 W Linear Derating Factor 1.3 W/℃ VGS Gate-to-Source Voltage ±20 V IAR Avalanche Current ① 62 A EAR Repetitive Avalanche Energy ① 20 mJ dv/dt Peak Diode Recovery dv/dt ③ 5.0 V/ns TJ TSTG Operating Junction and Storage Temperature Range -55 to +175 Soldering Temperature, for 10 seconds 300 (1.6mm from case) ℃ Mounting torque, 6-32 or M3 srew 10 Ibf •in (1.1 N•m) Thermal Resistance Parameter Typ. Max. Units RӨJC Junction-to-Case - 0.75 RӨCS Case-to-Sink, Flat, Greased Surface 0.50 - RӨJA Junction-to-Ambient - 62 ℃ /W |
Số phần tương tự - IRF3205 |
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Mô tả tương tự - IRF3205 |
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