PXAE213708NB-V1-R2 datasheet(1/5 Pages) CREE

tên linh kiện	PXAE213708NB-V1-R2

Giải thích chi tiết về linh kiện	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

PDF	5 Pages

Scroll/Zoom	100%

nhà sản xuất	CREE [Cree, Inc]

Trang chủ	http://www.cree.com/

Logo

1 / 5 page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 01, 2018-09-26

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PXAE213708NB

Package PG-HB2SOF-8-1

Thermally-Enhanced High Power RF LDMOS FET

400 W, 29 V, 2110 – 2180 MHz

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main: P3dB = 160 W Typ

- Peak: P3dB = 290 W Typ

• Typical Pulsed CW performance, 2180 MHz, 28 V,

Dohertyconfiguration,10µspulsewidth,10%dutycycle,

class AB

- Output power at P3dB = 400 W

-PowerAddedEfficiencyatP3dB=60.3%

- Power Gain = 13.7 dB

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-

standardcellularpoweramplifierapplicationsinthe2110to2180MHz

frequencyband.Featuresincludeinputmatching,highgainandthermally-

enhancedpackagewithearlessflange.ManufacturedwithWolfspeed's

advanced LDMOS process, this device provides excellent thermal perform-

ance and superior reliability.

Target RF Characteristics

Single-carrier WCDMA Specifications (testedinWolfspeedDohertytestfixture)

VDD = 29 V, IDQ = 750 mA, VGSPEAK = 1.5 V, POUT = 54 W avg, ƒ = 2180 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =

10dB@0.01%CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—

16

—

dB

DrainEfficiency

hD

—

51

—

%

Adjacent Channel Power Ratio

ACPR

—

–27

—

dBc

OutputPARat0.01%probabilityonCCDF

OPAR

—

8.7

—

dB

Advance PXAE213708NB

Advance Specification Data

Sheets describe products that are

being considered by Wolfspeed for

development and market intro-

duction. The target performance

shown in Advance Specifications

isnotfinalandshouldnotbeused

for any design activity. Please

contact Wolfspeed about the fu-

ture availability of these products.

Số phần tương tự - PXAE213708NB-V1-R2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
WOLFSPEED, INC.	PXAE213708NB-V1-R2	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20

More results

Mô tả tương tự - PXAE213708NB-V1-R2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	PTFA210701E	387Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
	PTFA210301E	198Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211001E	223Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211801E	583Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz Rev. 06, 2011-01-11
	PTFA212002E	227Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz Rev. 02, 2005-05-16
	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
Cree, Inc	PTFB211503FL	578Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz
Cree, Inc	PTFB212503FL	553Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz
WOLFSPEED, INC.	PXAE213708NB	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20

More results

PXAE213708NB-V1-R2 bảng dữ liệu(PDF) 1 Page - Cree, Inc

PXAE213708NB-V1-R2 bảng dữ liệu(HTML) 1 Page - Cree, Inc

Số phần tương tự - PXAE213708NB-V1-R2

Mô tả tương tự - PXAE213708NB-V1-R2

Html Pages

1 2 3 4 5

bảng dữ liệu tải về

Link URL