GTRA374902FC-V1-R2 datasheet(3/8 Pages) CREE

tên linh kiện	GTRA374902FC-V1-R2

Giải thích chi tiết về linh kiện	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	CREE [Cree, Inc]

Trang chủ	http://www.cree.com/

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 02.1, 2019-04-26

GTRA374902FC

Typical Performance (data taken in test fixture)

-70

-60

-50

-40

-30

-20

-10

37.5

42.5

47.5

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 250 mA,

VGS(PEAK) = -5.8 V, ƒ = 3700 MHz,

3GPP WCDMA signal, PAR = 10 dB,

BW = 3.84 MHz

ACPU

ACPL

Efficiency

gtra374902fc_g2

3350

3450

3550

3650

3750

3850

Frequency (MHz)

Single-carrier WCDMA Broadband

Performance

VDD = 48 V, IDQ(MAIN) = 250 mA,

VGS(PEAK) = -5.8 V, POUT = 48 dBm,

3GPP WCDMA signal, PAR = 10 dB

Efficiency

Gain

gtra374902fc_g3

-25

-20

-15

-10

-5

-40

-35

-30

-25

-20

3350

3450

3550

3650

3750

3850

Frequency (MHz)

Single-carrier WCDMA Broadband

Performance

VDD = 48 V, IDQ(MAIN) = 250 mA,

VGS(PEAK) = -5.8 V, POUT = 48 dBm,

3GPP WCDMA signal, PAR = 10 dB

ACPU

ACPL

IRL

gtra374902fc_g4

Output Power (dBm)

Pulse CW Performance

VDD = 48 V, IDQ(MAIN) = 250 mA,

VGS(PEAK) = -5.8 V，ƒ = 3700 MHz

gtra374902fc_g5

Gain

Efficiency

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