IXTQ110N10P datasheet(4/5 Pages) IXYS

4 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 110N10P

IXTT 110N10P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,381,025

6,162,665

6,306,728 B1 6,534,343

6,683,344

one or moreof the following U.S. patents:

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,486,715

6,259,123B1 6,404,065B1 6,583,505

6,710,405B2

Fig. 11. Capacitance

100

1000

10000

VDS - Volts

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

2040

6080

100

120

Q G - nanoCoulombs

DS = 50V

D = 55A

G = 10mA

Fig. 7. Input Adm ittance

100

125

150

175

200

225

250

678

VG S - Volts

J = -40ºC

ºC

150

ºC

Fig. 8. Transconductance

100

150

200

250

300

I D - Amperes

J = -40ºC

ºC

150

ºC

Fig. 9. Source Current vs.

Source-To-Drain Voltage

100

150

200

250

300

350

0.4

0.6

0.8

1.2

1.4

1.6

1.8

VS D - Volts

J = 150ºC

J = 25ºC

Fig. 12. Forw ard-Bias

Safe Operating Area

100

1000

100

1000

VD S - Volts

100µs

1ms

J = 175ºC

C = 25ºC

DS(on) Limit

10ms

25µs

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