HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series

Rev.3.00, Feb.02.2004, page 20 of 26

WE, CE Pin Operation

During a write cycle, addresses are latched by the falling edge of

WE or CE, and data is latched by the

rising edge of

WE or CE.

Write/Erase Endurance and Data Retention Time

The endurance is 10

programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is

page-programmed less than 10

Data Protection

To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15

ns or less.

1. Data Protection against Noise on Control Pins (

CE, OE, WE) during Operation

During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to

programming mode by mistake. Be careful not to allow noise of a width of more than 15 ns on the

control pins.

WE

CE

OE

V

0 V

V

0 V

15 ns max

IH

IH