WNM2020 datasheet(2/4 Pages) KEXIN

tên linh kiện	WNM2020

Giải thích chi tiết về linh kiện	N-Channel MOSFET

PDF	4 Pages

Scroll/Zoom	100%

nhà sản xuất	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Trang chủ	http://www.kexin.com.cn/index.asp

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MOSFET

N-Channel MOSFET

WNM2020

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

VDS=16V, VGS=0V

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±5V

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

0.45

0.85

VGS=4.5V, ID=0.55A

310

VGS=2.5V, ID=0.45A

360

VGS=1.8V, ID=0.35A

460

Forward Transconductance

gFS

VDS=5V, ID=0.55A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

1.15

Threshold Gate Charge

Qg(th)

0.06

Gate Source Charge

Qgs

0.15

Gate Drain Charge

Qgd

0.23

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

700

Turn-Off Fall Time

380

Maximum Body-Diode Continuous Current

0.35

Diode Forward Voltage

VSD

IS=0.35A,VGS=0V

0.5

1.5

mΩ

VDD=10V, VGS=4.5V,

ID =0.55A, RG=6Ω

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=10V, f=100KHz

VGS=4.5V, VDS=10V, ID=0.55A

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Marking

W28*

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