EMDA0P10G datasheet(4/5 Pages) EXCELLIANCE

tên linh kiện	EMDA0P10G

Giải thích chi tiết về linh kiện	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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nhà sản xuất	EXCELLIANCE [Excelliance MOS Corp.]

Trang chủ	http://www.excelliancemos.com/

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4 / 5 page

2016/9/1

p.4

EMDA0P10G

‐V ‐ Drain‐Source Voltage( V )

‐7.0V

V = ‐10 V

Typical output characteristics

‐8.0V

Body Diode Forward Voltage Variation

with Source Current and Temperature

T = 125°C

‐V ‐ Body Diode Forward Voltage( V )

0.6

0.0001

0.001

0.01

0.2

0.4

25°C

V = 0V

0.1

0.8

1.0

‐55°C

1.2

On‐Resistance Variation with Temperature

T ‐ Junction Temperature ( °C )

‐50

0.4

0.7

1.0

‐25

I = ‐3.4 A

V = ‐10V

1.3

1.6

1.9

125

100

150

On‐Resistance Variation with Gate‐Source Voltage

T = 25°C

T = 125°C

‐ V ‐ Gate‐Source Voltage( V )

0.10

0.20

0.30

0.40

I = ‐ 3.4 A

T = ‐55°C

‐V ‐ Gate‐Source Voltage( V )

V = ‐ 10V

25°C

125°C

Transfer Characteristics

On‐Resistance Variation with Drain Current and Gate Voltage

‐ I ‐ Drain Current( A )

1.5

0.5

1.0

V = ‐ 7.0 V

2.0

‐ 8.0 V

‐ 10.0 V

2.5

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