HAL805 datasheet(17/24 Pages) MICRONAS

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PRELIMINARY DATA SHEET

HAL 805

Micronas

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one

ceramic 4.7 nF capacitor each between ground and

the supply voltage, respectively the output voltage pin.

In addition, the input of the controller unit should be

pulled-down with a 4.7 kOhm resistor and a ceramic

4.7 nF capacitor.

Please note that during programming, the sensor will

be supplied repeatedly with the programming voltage

of 12 V for 100 ms. All components connected to the

VDD line at this time must be able to resist this voltage.

Fig. 4–1: Recommended application circuit

4.2. Use of two HAL 805 in Parallel

Two different HAL 805 sensors which are operated in

parallel to the same supply and ground line can be

programmed individually. In order to select the IC

which should be programmed, both Hall ICs are inacti-

vated by the “Deactivate” command on the common

supply line. Then, the appropriate IC is activated by an

“Activate” pulse on its output. Only the activated sen-

sor will react to all following read, write, and program

commands. If the second IC has to be programmed,

the “Deactivate” command is sent again, and the sec-

ond IC can be selected.

Fig. 4–2: Parallel operation of two HAL 805

4.3. Temperature Compensation

The relationship between the temperature coefficient

of the magnet and the corresponding TC and TCSQ

codes for linear compensation is given in the following

table. In addition to the linear change of the magnetic

field with temperature, the curvature can be adjusted

as well. For this purpose, other TC and TCSQ combi-

nations are required which are not shown in the table.

Please contact MICRONAS for more detailed informa-

tion on this higher order temperature compensation.

The HAL 800 and HAL 805 contain the same tempera-

ture compensation circuits. If an optimal setting for the

HAL 800 is already available, the same settings may

be used for the HAL 805.

OUT

VDD

GND

4.7 nF

HAL805

4.7 k

Ω

µC

4.7 nF

HAL 805

GND

10 nF

HAL 805

4.7 nF

Sensor A

Sensor B

VDD

OUT B & Select B

OUT A & Select A

Temperature

Coefficient of

Magnet (ppm/K)

TCSQ

400

300

200

100

018

−50

−90

−130

−170

−200

−240

−280

−320

−360

−410

−450

−500

−550

−600

−650

−700

−750

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