EMBA3P03JS datasheet(3/5 Pages) EXCELLIANCE

tên linh kiện	EMBA3P03JS

Giải thích chi tiết về linh kiện	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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nhà sản xuất	EXCELLIANCE [Excelliance MOS Corp.]

Trang chủ	http://www.excelliancemos.com/

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3 / 5 page

2015/7/15

p.3

EMBA3P03JS

Normalized on‐Resistance v.s. Junction Temperature

T ‐ Junction Temperature ( °C )

1.2

0.6

‐50

0.8

1.0

‐25

I = ‐2.7A

V = ‐10V

1.4

1.6

1.8

150

100

125

Body Diode Forward Voltage Variation

with Source Current and Temperature

T = 125°C

‐V ‐ Body Diode Forward Voltage( V )

0.6

0.0001

0.001

0.01

0.2

0.4

25°C

V = 0V

0.1

0.8

1.0

‐55°C

1.2

‐V ‐ Drain‐Source Voltage( V )

‐5V

‐4.5V

‐8V

‐7V

V = ‐10V

Typical output characteristics

‐ V , Drain‐Source Voltage( V )

Capacitance Characteristics

300

100

200

Crss

7.5

Coss

400

500

600

22.5

Ciss

f =1MHz

VGS=0 V

V = ‐10V

Q ‐ Gate Charge( nC )

I = ‐ 2.7A

‐ 15V

Gate Charge Characteristics

T = 25°C

‐ V ‐ Gate‐Source Voltage( V )

0.10

0.00

0.05

0.15

0.20

0.25

0.30

T = 125°C

I = ‐ 2A

On‐Resistance Variation with Gate‐Source Voltage

TYPICAL CHARACTERISTICS

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