EMB80P03VAT datasheet(4/5 Pages) EXCELLIANCE

tên linh kiện	EMB80P03VAT

Giải thích chi tiết về linh kiện	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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nhà sản xuất	EXCELLIANCE [Excelliance MOS Corp.]

Trang chủ	http://www.excelliancemos.com/

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4 / 5 page

2015/7/23

p.4

EMB80P03VAT

‐V ,Gate‐Source Voltage( V )

Transfer Characteristics

V = ‐10V

25 C

T = ‐55 C

125 C

‐V ‐ Drain‐Source Voltage( V )

‐5.0V

‐4.5V

‐7.0V

‐6.0V

V = ‐10 V

Typical output characteristics

‐8.0V

Drain Current and Gate Voltage

‐I Drain Current( A )

On‐Resistance Variation with

0.8

1.2

1.0

1.4

V = ‐4.5V

2.2

1.8

1.6

2.0

2.4

‐6.0V

‐7.0V

‐10V

‐5.0V

‐8.0V

Normalized on‐Resistance v.s. Junction Temperature

T ‐ Junction Temperature (°C)

1.2

0.6

‐50

0.8

1.0

‐25

I = ‐3.6A

V = ‐10V

1.4

1.6

1.8

150

100

125

T = 25°C

‐ V ‐ Gate‐Source Voltage( V )

0.10

0.05

0.15

0.20

0.25

0.30

T = 125°C

I = ‐ 2.5A

On‐Resistance Variation with Gate‐Source Voltage

Body Diode Forward Voltage Variation

with Source Current and Temperature

T = 125°C

‐V ‐ Body Diode Forward Voltage( V )

0.6

0.0001

0.001

0.01

0.2

0.4

25°C

V = 0V

0.1

0.8

1.0

‐55°C

1.2

TYPICAL CHARACTERISTICS

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