WNMD2174-4SLASHTR datasheet(2/8 Pages) WILLSEMI

2 / 8 page

WNMD2174

Will Semiconductor Ltd.

Electronics Characteristics (Ta=25

oC, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Source to Source Voltage

VSSS

VGS = 0 V, IS = 250uA

Zero Gate Voltage Drain Current

ISSS

VSS =12 V, VGS = 0V

TEST CIRCUIT 1

Gate Leakage Current

IGSS

VSS = 0 V, VGS = ±10V

TEST CIRCUIT 2

±10

ON CHARACTERISTICS

Gate to Source Cut-off Voltage

VGS(off)

VGS = VSS, IS = 250uA

TEST CIRCUIT 3

0.4

0.8

1.2

Source to Source On-state

Resistance

RSS(on)

VGS = 4.5V, IS = 3.0A

TEST CIRCUIT 5

mΩ

VGS = 4.0V, IS = 3.0A

TEST CIRCUIT 5

VGS = 3.8V, IS = 3.0A

TEST CIRCUIT 5

11.5

VGS = 3.1V, IS = 3.0A

TEST CIRCUIT 5

VGS = 2.5V, IS = 3.0A

TEST CIRCUIT 5

Forward Transfer Admittance

| yfs |

VSS = 10 V, IS = 1.8A

TEST CIRCUIT 4

BODY DIODE CHARACTERISTICS

Body Diode Forward Voltage

VF(S-S)

VGS = 0 V, IF = 1.0A

TEST CIRCUIT 6

0.9

1.5

SWITCHING CHARACTERISTICS

Turn-On Delay Time

td(ON)

VGS = 4.5 V, VSS=10V,

RL=3.3 Ω , IS=3A,RG=6Ω

TEST CIRCUIT 8

680

Rise Time

2960

Turn-Off Delay Time

td(OFF)

6480

Fall Time

6760

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1kHz,

VSS = 10 V

TEST CIRCUIT 7

1313

Output Capacitance

COSS

257

Reverse Transfer Capacitance

CRSS

238

Total Gate Charge

QG(TOT)

VG1S1 = 4.5 V, VSS = 10V,

IS =6A

TEST CIRCUIT 9

17.8

Threshold Gate Charge

QG(TH)

0.79

Gate-to-Source Charge

QGS

2.5

Gate-to-Drain Charge

QGD

6.4

2018/

- Rev.1.6

7/ 17

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