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DAM8N800F bảng dữ liệu(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM8N800F bảng dữ liệu(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD. |
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2 / 4 page ![]() Electrical Characteristics @ TJ =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V IDS=250uA 800 - - V Zero Gate Voltage Drain Current IDSS VGS=0V VDS=800V - - 1 uA Gate-Body Leakage IGSS VGS=±30V VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS IDS=250uA 2 3.7 4 V Static Drain-Source On-Resistance RDS(on) VGS=10V IDS=4A - 1.1 1.4 Ω Dynamic Characteristics Input Capacitance Ciss VDS=25V VGS=0V Freq.=1MHz - 1610 - pF Output Capacitance Coss - 133 - Reverse Transfer Capacitance Crss - 78 - Switching Characteristics Turn-On Delay Time Td(on) VDD=30V VGS=10V RG =2.5Ω IDS=0.5A - 78 - ns Rise Time Tr - 100 - Turn-Off Delay Time Td(off) - 313 - Fall Time Tf - 102 - Total Gate Charge Qg VDS=50V VGS=10V IDS=4A - 29.3 - nC Gate to Source Charge Qgs - 5.2 - Gate to Drain Charge Qgd - 13.2 - Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V IS=1A - - 1 V Notes: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. VDD=80V,VGS=10V,L=3mH,IAS=9.4A.,RG=25Ω, Starting TJ=25°C 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. Apr.2018 DAM8N800F |
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