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DAM8N800F bảng dữ liệu(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V IDS=250uA
800
-
-
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V VDS=800V
-
-
1
uA
Gate-Body Leakage
IGSS
VGS=±30V VDS=0V
-
-
±100
nA
ON Characteristics
Gate Threshold Voltage
VTH
VDS=VGS IDS=250uA
2
3.7
4
V
Static Drain-Source On-Resistance
RDS(on)
VGS=10V IDS=4A
-
1.1
1.4
Ω
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V
VGS=0V
Freq.=1MHz
-
1610
-
pF
Output Capacitance
Coss
-
133
-
Reverse Transfer Capacitance
Crss
-
78
-
Switching Characteristics
Turn-On Delay Time
Td(on)
VDD=30V
VGS=10V
RG =2.5Ω
IDS=0.5A
-
78
-
ns
Rise Time
Tr
-
100
-
Turn-Off Delay Time
Td(off)
-
313
-
Fall Time
Tf
-
102
-
Total Gate Charge
Qg
VDS=50V
VGS=10V
IDS=4A
-
29.3
-
nC
Gate to Source Charge
Qgs
-
5.2
-
Gate to Drain Charge
Qgd
-
13.2
-
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V IS=1A
-
-
1
V
Notes:
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. VDD=80V,VGS=10V,L=3mH,IAS=9.4A.,RG=25Ω, Starting TJ=25°C
3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
Apr.2018
DAM8N800F



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