ART45U120 datasheet(2/2 Pages) ARTSCHIP

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ART45U120(1GBT1200)

INSULATED GATE BIPOLAR TRANSISTOR

www.artschip.com

ELECTRICAL CHARACTERISTICS (Tj =25 °C)

Parameter

Symbol

Units

Test Conditions

Min

Typ.

Max

Collector-to-Emitter Breakdown Voltage

V(BR)CES

VGE = 0V, IC = 250µA

1200

Emitter-to-Collector Breakdown Voltage

V(BR)ECS

VGE = 0V, IC = 1A

Breakdown Voltage Temp.Coefficient

∆V(BR)CES/

∆TJ

V/˚C

VGE = 0V, IC = 2 mA

0,9

VGE = 15V, IC = 24A

2,6

3,5

VGE = 15V, IC = 45A

3,1

Collector-to-Emitter Saturation

Voltage

(see figure 2,5)

VCE(ON)

VGE = 15V, IC = 24A

TJ =150˚C

2,6

Gate Threshold Voltage

VGE(th)

VGE=VCE, IC =250 µA

3,0

6,0

Threshold Voltage Temp.Coefficient

∆V(GE)th/

∆TJ

mV/˚C

VGE=VCE, IC =2mA

-10

Forward Transconductance

g (fe)

VCE = 100V, IC = 24 A

VCE = 1200V, VGE =0V

250

VCE = 10V, VGE =0V

2,0

Zero Gate Voltage Collector

Current

ICES

µA

VCE = 1200V, VGE =0V

TJ =150˚C

5000

Gate-to-Emitter Leakage Current

IGES

VGS = ±20V

±100

SWITCHING CHARACTERISTICS (Tj =25 °C)

Parameter

Symbol

Units

Test Conditions

Min

Typ.

Max

Total Gate Charge (turn on)

180

270

Gate-to-Emitter Charge (turn on)

Qge

Gate-to-Collector Charge (turn on)

Qgc

VGE = 15V,VCC = 400V,

IC =40A

See Figure 8

110

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

200

300

Fall Time

130

190

Turn-On Switching Loss

Eon

1,21

Turn-Off Switching Loss

Eoff

2,25

Total Switching Loss

EtS

VCC =960V, IC =240A

VGE = 15V RG=24 Ω

Energy losses include «tail»

See Figure 9,10,14

3,46

4,1

Short Circuit Withstand Time

tSC

µS

Vcc=720V, TJ=125˚C

VGE=15V RG=5,0Ω

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

380

Fall Time

280

Total Switching Loss

EtS

TJ =150˚C

VCC =960V, IC =24A

VGE = 15V RG=24 Ω

Energy losses include «tail»

See Figure 10,11,14

7,80

Input Capacitance

CISS

2800

Output Capacitance

COSS

140

Reverse Transfer Capacitance

CRSS

VGE = 0V,VCC = 30V,

f = 1.0MHz

See Figure 7

NOTES:

1 Repetitive rating; V

GE =20V, pulse width limited by max junction temperature.(Fig.13b)

2 V

CC=80%(VCES), L= 10 µH, VGE = 15V, RG=5,0 Ω,(Fig.13a)

3 Pulse width ≤80 µs, duty factor ≤0,1%.

4 Pulse width 5,0µs single short.

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