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ART40U120 bảng dữ liệu(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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Giải thích chi tiết về linh kiện  INSULATED GATE BIPOLAR TRANSISTOR
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ART40U120 bảng dữ liệu(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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ART40U120
INSULATED GATE BIPOLAR TRANSISTOR
www.artschip.com
2
ELECTRICAL CHARACTERISTICS (Tj =25 °C)
Parameter
Symbol
Units
Test Conditions
Min
Typ.
Max
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V
VGE = 0V, IC = 250µA
1200
-
-
Breakdown Voltage Temp.Coefficient
∆V(BR)CES/
∆TJ
V/˚C
VGE = 0V, IC = 2 mA
-
0,9
-
VGE = 15V, IC = 20A
-
2,5
3,3
VGE = 15V, IC = 40A
-
3,0
-
Collector-to-Emitter Saturation
Voltage
VCE(ON)
V
VGE = 15V, IC = 20A
TJ =150˚C
-
2,6
-
Gate Threshold Voltage
VGE(th)
V
VGE=VCE, IC =250 µA
3,0
-
6,0
Threshold Voltage Temp.Coefficient
∆V(GE)th/
∆TJ
mV/˚C
VGE=VCE, IC =2mA
-
-10
-
Forward Transconductance
g (fe)
S
VCE = 100V, IC = 20 A
12
18
-
VCE = 1200V, VGE =0V
-
-
250
VCE = 10V, VGE =0V
-
-
2,0
Zero Gate Voltage Collector
Current
ICES
µA
VCE = 1200V, VGE =0V
TJ =150˚C
-
-
5000
Gate-to-Emitter Leakage Current
IGES
nA
VGS = ±20V
±100
SWITCHING CHARACTERISTICS (Tj =25 °C)
Parameter
Symbol
Units
Test Conditions
Min
Typ.
Max
Total Gate Charge (turn on)
Qg
-
168
256
Gate-to-Emitter Charge (turn on)
Qge
-
22
35
Gate-to-Collector Charge (turn on)
Qgc
nC
VGE = 15V,VCC = 400V,
IC =20A
-
65
102
Turn-On Delay Time
td(on)
-
30
-
Rise Time
tr
-
23
-
Turn-Off Delay Time
td(off)
-
180
270
Fall Time
tf
ns
-
120
178
Turn-On Switching Loss
Eon
-
1,2
-
Turn-Off Switching Loss
Eoff
-
2,1
-
Total Switching Loss
EtS
mJ
VCC =960V, IC =20A
VGE = 15V RG=24 Ω
Energy losses include «tail»
-
3,2
4,0
Short Circuit Withstand Time
tsc
µs
Vcc=720V, TJ=125˚C
VGE=15V RG=5,0Ω
10
-
-
Turn-On Delay Time
td(on)
-
32
-
Rise Time
tr
-
27
-
Turn-Off Delay Time
td(off)
-
370
-
Fall Time
tf
ns
-
267
-
Total Switching Loss
EtS
mJ
TJ=150˚C
VCC =960V, IC =24A
VGE = 15V RG=24 Ω
Energy losses include «tail»
-
7,70
-
Input Capacitance
CISS
-
2600
-
Output Capacitance
COSS
-
120
-
Reverse Transfer Capacitance
CRSS
pF
VGE = 0V,VCC = 30V,
f = 1.0MHz
-
45
-
Notes:
1 Repetitive rating; V
GE =20V, pulse width limited by max junction temperature.
2 V
CC=80%(VCES), L= 10 µH, VGE = 15V, RG=5,0 Ω.
3 Pulse width ≤80 µs, duty factor ≤0,1%.
4 Pulse width 5,0µs single short.



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