1N60

Power MOSFET

www.artschip.com

2

ABSOLUTE MAXIMUM RATINGS

℃

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

2.0

A

Drain Current Continuous

0.76

A

Drain Current Pulsed (Note 2)

4.8

A

Repetitive(Note 2)

50

mJ

Avalanche Energy

Single Pulse(Note 3)

140

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

40

W

Total Power Dissipation

Derate above 25°C

0.32

W/°C

Junction Temperature

TJ

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤ 1.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

TO-251

112

TO-252

112

TO-220

54

Thermal Resistance Junction-Ambient

TO-220F

54

TO-251

12

TO-252

12

Thermal Resistance Junction-Case

TO-220

4

°C / W

ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Off Characteristics

Drain-Source Breakdown Voltage

600

V

10

mA

Zero Gate Voltage Drain Current

100

mA

Forward

100

nA

Gate-Body

Leakage

Current

Reverse

-100

Breakdown Voltage Temperature

Coefficient

△

0.4

V/℃

On Characteristics

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

9.3

11.5

Ω

Forward Transconductance

0.9

S

Dynamic Characteristics

Input Capacitance

120

150

pF

Output Capacitance

20

25

pF

Reverse Transfer Capacitance

3.0

4.0

pF