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SM2001CSK bảng dữ liệu(PDF) 4 Page - Sinopower Semiconductor Inc

tên linh kiện SM2001CSK
Giải thích chi tiết về linh kiện  Dual Enhancement Mode MOSFET (N- and P-Channel)
PDF  16 Pages
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nhà sản xuất  SINOPWER [Sinopower Semiconductor Inc]
Trang chủ  http://www.sinopowersemi.com/Form2/index.aspx
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SM2001CSK bảng dữ liệu(HTML) 4 Page - Sinopower Semiconductor Inc

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4
SM2001CSK
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - March, 2018
®
Electrical Characteristics (Cont.) (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Channel 2
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=-250μA
-20
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=-16V, VGS=0V
-
-
-1
mA
TJ=85°C
-
-
-30
uA
VGS(th)
Gate Threshold Voltage
VDS=VGS , IDS=-250mA
-0.5
-0.7
-1
V
IGSS
Gate Leakage Current
VGS=±12V, VDS=0V
-
-
±100
nA
RDS(ON) Drain-Source On-state Resistance
VGS=-4.5V, IDS=-6A
-
36
45
m
W
VGS=-2.5V, IDS=-4A
-
50
65
Diode Characteristics
VSD
Diode Forward Voltage
ISD=-1.2A, VGS=0V
-
-0.7
-1
V
trr
Reverse Recovery Time
Isd=-6A, dlSD/dt=100A/ms
-
12
-
ns
Qrr
Reverse Recovery Charge
-
4.5
-
nC
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
3.5
-
W
Ciss
Input Capacitance
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
-
590
-
pF
Coss
Output Capacitance
-
122
-
Crss
Reverse Transfer Capacitance
-
92
-
td(ON)
Turn-on Delay Time
VDD=-10V, RL=10W,
IDS=-1A, VGEN=-4.5V,
RG=1W
-
8.4
16
ns
tr
Turn-on Rise Time
-
14.1
26
td(OFF)
Turn-off Delay Time
-
16
30
tf
Turn-off Fall Time
-
10.7
20
Gate Charge Characteristics
Qg
Total Gate Charge
VDS=-10V, VGS=-4.5V,
IDS=-6A
-
7.68
-
nC
Qgs
Gate-Source Charge
-
0.66
-
Qgd
Gate-Drain Charge
-
2.72
-
Qgth
Threshold Gate Charge
-
0.3
-



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