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VSC7939RP bảng dữ liệu(PDF) 4 Page - Vitesse Semiconductor Corporation

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Giải thích chi tiết về linh kiện  Laser Diode Driver with Automatic Power Control
PDF  18 Pages
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nhà sản xuất  VITESSE [Vitesse Semiconductor Corporation]
Trang chủ  http://www.vitesse.com
Logo VITESSE - Vitesse Semiconductor Corporation

VSC7939RP bảng dữ liệu(HTML) 4 Page - Vitesse Semiconductor Corporation

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VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7939
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
Page 4
G52350-0, Rev 3.2
02/26/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Absolute Maximum Ratings(1)
Power Supply Voltage (VCC)............................................................................................................. -0.5V to +7V
Current into BIAS.....................................................................................................................-20mA to +150mA
Current into OUT+, OUT- ...............................................................................................................................TBD
Current into MD ............................................................................................................................. -5mA to +5mA
Current into FAIL ......................................................................................................................... -10mA to 30mA
Voltage at DATA+, DATA-, CLK+, CLK-, ENABLE, LATCH......................................... -0.5V to (VCC + 0.5V)
Voltage at APCFILT, MODSET, BIASMAX, APCSET, MD, FAIL ............................................. -0.5V to +3.0V
Voltage at OUT+, OUT- ..................................................................................................... -0.5V to (VCC + 1.5V)
Voltage at BIAS .................................................................................................................. -0.5V to (VCC + 0.5V)
Continouous Power Dissipation (TA = +85°C, TQFP derate 20.8mW/°C above +85°C) .......................1350mW
Operating Junction Temperature Range ...................................................................................... -55°C to +150°C
Storage Temperature Range ........................................................................................................ -65°C to +165°C
NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-
ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended
periods may affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (VCC)..................................................................................................... +3.135V to +5.25V
Negative Voltage Rail (GND) ............................................................................................................................0V
Modulation Current (IMOD)
(1) .......................................................................................................................30mA
Ambient Temperature Range (TA)................................................................................................. -40°C to +85°C
NOTE:
(1) VCC = 3.3V, IBIAS = 60mA.



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