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SIF4N60D bảng dữ liệu(PDF) 2 Page - Shenzhen SI Semiconductors Co.,LTD. |
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2 / 9 page  深圳深爱半导体股份有限公司 产品规格书 Shenzhen Shenzhen Shenzhen Shenzhen SI SI SI SI Semiconductors Semiconductors Semiconductors Semiconductors Co., Co., Co., Co., LTD. LTD. LTD. LTD. Product Product Product Product Specification Specification Specification Specification Si Si Si Si semiconductors semiconductors semiconductors semiconductors 20 20 20 2016.3 16.3 16.3 16.3 2 N- N- N- N-沟道功率 MOS MOS MOS MOS 管//// N-C N-C N-C N-CHANNEL HANNEL HANNEL HANNEL POWER POWER POWER POWER MOSFET MOSFET MOSFET MOSFET SIF SIF SIF SIF4N60D 4N60D 4N60D 4N60D 参数 PARAMETER PARAMETER PARAMETER PARAMETER 符号 SYMBOL SYMBOL SYMBOL SYMBOL 测试条件 TEST TEST TEST TEST CONDITION CONDITION CONDITION CONDITION 最小值 MIN MIN MIN MIN 典型值 TYP TYP TYP TYP 最大值 MAX MAX MAX MAX 单位 UNIT UNIT UNIT UNIT 栅极漏电流 Gate-body Leakage Current (VDS = 0) IGSS VGS =±30V ±100 nA 漏-源导通电阻 Static Drain-source On Resistance RDS(ON) VGS =10V, ID=2.0A ③ ③ ③ ③ 2.00 2.5 Ω 输入电容 Input Capacitance Ciss VGS = 0V, VDS = 25V F = 1.0MHZ 560 pF 输出电容 Output Capacitance Coss 45 反向传输电容 Reverse transfer Capacitance Crss 17 关断延迟 Turn -Off Delay Time Td(off) VDD=300V, ID =4.0A RG=25Ω ③ ③ ③ ③ 61 ns 开启延迟时间 Turn-on delay time Td(on) 24 开启上升时间 Rise time Tr 28 关断下降时间 Fall time Tf 200 栅极电荷 Total Gate Charge Qg ID =4.0A, VDS = 480V VGS = 10V ③ ③ ③ ③ 13.3 nC 栅源电荷 Gate-to-Source Charge Qgs 3.0 栅极开启电荷量 Gate charge at threshold Qg(th) 0.8 栅漏电荷 Gate-to-Drain Charge Qgd 4.8 二极管正向电流 Continuous Diode Forward Current IS 4.0 A 二极管正向压降 Diode Forward Voltage VSD Tj=25°C, Is=4.0A VGS =0V ③ ③ ③ ③ 1.4 V 反向恢复时间 Reverse Recovery Time trr Tj=25°C, If=4.0A di/dt=100A/μs ③ ③ ③ ③ 390 ns 反向恢复电荷 Reverse Recovery Charge Qrr 1.5 uC 输入阻抗 Gate resistance RG 7 Ω ●热特性 ●Thermal Thermal Thermal Thermal Characteristics Characteristics Characteristics Characteristics 参数 PARAMETER PARAMETER PARAMETER PARAMETER 符号 SYMBOL SYMBOL SYMBOL SYMBOL 最大值 MAX MAX MAX MAX 单位 UNIT UNIT UNIT UNIT TO-220 TO-220 TO-220 TO-220 TO-220FP TO-220FP TO-220FP TO-220FP TO-262/263 TO-262/263 TO-262/263 TO-262/263 热阻结-壳 Thermal Resistance Junction-case RthJC 1.20 3.47 1.20 ℃/W 热阻结-环境 Thermal Resistance Junction-ambient RthJA 62.5 62.5 62.5 ℃/W 注释((((Notes Notes Notes Notes)))):::: ① ① ① ① 脉冲宽度：以最高结温为限制 Repetitive rating: Pulse width limited by maximum junction temperature ② ② ② ② 初始结温=25oC, VDD =50V, L=25mH, RG =25Ω, IAS=4.0A Starting Tj=25oC, VDD =50V, L=25mH, RG =25Ω, IAS=4.0A ③ ③ ③ ③ 脉冲测试：脉冲宽度≤ 300μs ，占空比≤ 2 ％ L=500uH Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% |
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