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MSN03R034S bảng dữ liệu(PDF) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd

tên linh kiện MSN03R034S
Giải thích chi tiết về linh kiện  30V N-Channel Trench MOSFET
PDF  6 Pages
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nhà sản xuất  MAPLESMI [Shenzhen Meipusen Semiconductor Co., Ltd]
Trang chủ  http://www.meipusen.com/
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MSN03R034S bảng dữ liệu(HTML) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd

  MSN03R034S Datasheet HTML 1Page - Shenzhen Meipusen Semiconductor Co., Ltd MSN03R034S Datasheet HTML 2Page - Shenzhen Meipusen Semiconductor Co., Ltd MSN03R034S Datasheet HTML 3Page - Shenzhen Meipusen Semiconductor Co., Ltd MSN03R034S Datasheet HTML 4Page - Shenzhen Meipusen Semiconductor Co., Ltd MSN03R034S Datasheet HTML 5Page - Shenzhen Meipusen Semiconductor Co., Ltd MSN03R034S Datasheet HTML 6Page - Shenzhen Meipusen Semiconductor Co., Ltd  
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Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 uA
30
--
--
V
△BVDSS
/
△TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 uA, Referenced to 25℃
--
0.05
--
V/℃
IDSS
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V
--
--
1
uA
VDS = 30 V, Tj =55 ℃
--
--
5
uA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 uA
1.3
1.9
2.7
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 24 A
--
3.0
3.4
mΩ
gFS
Forward Transconductance
VDS = 5 V, ID = 10A
--
42
--
S
gFS
Forward Transconductance
VDS 5 V, ID 10A
42
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1615
2153
2691
pF
Coss
Output Capacitance
337
449
561
pF
Crss
Reverse Transfer Capacitance
157
209
261
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VGS = 10 V, ID=24A,
VDS = 15 V,RG=3.0 Ω
--
12.2
--
ns
tr
Turn-On Rise Time
--
12.2
--
ns
td(off)
Turn-Off Delay Time
--
39.4
--
ns
tf
Turn-Off Fall Time
--
10.3
--
ns
Qg
Total Gate Charge
VDS = 15 V, ID =24A,
VGS = 10 V
26.5
35.3
44.1
nC
Qgs
Gate-Source Charge
--
7.0
--
nC
Qgd
Gate-Drain Charge
--
5.4
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =24A
--
0.8
1.1
V
trr
Reverse Recovery Time
VGS = 0 V, IS =24A,
--
29.1
43.7
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/us
(Note 3)
--
21.2
31.8
uC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS =29A,L=0.1mH, VGS = 10V, Starting TJ = 25°C
3. Pulse Test : Pulse width
 300us, Duty cycle  2%
4. Essentially independent of operating temperature
Maple Semiconductor CO., LTD
http://www.meipusen.com
Rev. 00 Jan . 2019



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