PI5B9BA datasheet(4/4 Pages) NIKOSEM

tên linh kiện	PI5B9BA

Giải thích chi tiết về linh kiện	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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nhà sản xuất	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Trang chủ	http://www.niko-sem.com

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REV1.0

H-17-4

P-Channel Enhancement Mode

Field Effect Transistor

PI5B9BA

TO-251

Halogen-Free & Lead-Free

NIKO-SEM

25℃

125℃

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100ms

10ms

1ms

100

1000

0.1

100

NOTE :

1.VGS= -10V

2.TC=25

˚C

3.R

θJC = 1.2˚C/W

4.Single Pulse

Operation in This

Area is Limited by

RDS(ON)

200

400

600

800

1000

0.001

0.01

0.1

100

Single Pulse

θJC = 1.2˚C/W

TC=25

˚C

120

150

VDS=-15V

ID=-12A

Gate charge Characteristics

Characteristics

Qg , Total Gate Charge(nC)

Source-Drain Diode Forward Voltage

-VSD, Source-To-Drain Voltage(V)

Safe Operating Area

Single Pulse Maximum Power Dissipation

Single Pulse Time(s)

-VDS, Drain-To-Source Voltage(V)

Transient Thermal Response Curve

T1 , Square Wave Pulse Duration[sec]

Single Pulse

Duty cycle=0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.0001

0.001

0.01

0.1

100

Notes

1.Duty cycle, D= t1 / t2

2.RthJC = 1.2 ℃/W

3.TJ-TC = P*RthJC(t)

4.RthJC(t) = r(t)*RthJC

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