P1350ETFS datasheet(2/4 Pages) NIKOSEM

tên linh kiện	P1350ETFS

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

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nhà sản xuất	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

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REV 1.0

F-34-3

N-Channel Enhancement Mode

Field Effect Transistor

P1350ETF:TO-220F

P1350ETFS:TO-220FS

Halogen-Free & Lead-Free

NIKO-SEM

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V, ID = 6.5A

0.417 0.52

Forward Transconductance

gfs

VDS = 10V, ID = 6.5A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

1572

Output Capacitance

Coss

159

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDD = 400V, ID = 13A, VGS = 10V

Gate-Source Charge

Qgs

6.5

Gate-Drain Charge

Qgd

12.4

Turn-On Delay Time

td(on)

VDD = 250V, ID = 13A, RG= 4.7Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ= 25 °C)

Continuous Current

Forward Voltage

VSD

IF =13A, VGS = 0V

1.7

Reverse Recovery Time

trr

IF = 13A, dlF/dt = 100A / S

326

Reverse Recovery Charge

Qrr

4.1

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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