P0460ETFAS datasheet(2/4 Pages) NIKOSEM

tên linh kiện	P0460ETFAS

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

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nhà sản xuất	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

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REV 1.0

G-30-2

N-Channel Enhancement Mode

Field Effect Transistor

P0460ETFA:TO-220F

P0460ETFAS:TO-220FS

Halogen-Free & Lead-Free

NIKO-SEM

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V, ID = 2A

1.8

2.5

Forward Transconductance

gfs

VDS = 10V, ID = 2A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

590

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDD = 480V, ID = 4A, VGS = 10V

Gate-Source Charge

Qgs

2.4

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VGS = 10V , VDD = 300V,

ID = 4A, RG= 25Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 4A, VGS = 0V

Reverse Recovery Time

trr

IF = 4A, dlF/dt = 100A / S

334

Reverse Recovery Charge

Qrr

2.2

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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