| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
LD5760GS bảng dữ liệu(PDF) 16 Page - Leadtrend Technology |
|
|
|||||||||||||||||||||||||||||
LD5760GS bảng dữ liệu(HTML) 16 Page - Leadtrend Technology |
|
16 / 20 page ![]() LD5760 11/05/2015 16 Leadtrend Technology Corporation www.leadtrend.com.tw LD5760-DS-02 November 2015 CS GND LD5760 This resistor would protect the MOSFET from being false triggered by the current through CGD, if RG is disconnected. OUT Rg R8 CGD dt dV Cgd i bulk VBULK Fig. 20 Protection Resistor on the Hi-V Path In some other Hi-V process and design, there may be a parasitic SCR caused around HV pin, VCC and GND. As shown in Fig. 21, a small negative spike on the HV pin may trigger this parasitic SCR and cause latch-up between VCC and GND. It may damage the chip because of the equivalent short-circuit induced by such latch-up behavior. Leadtrend’s proprietary of Hi-V technology will eliminate parasitic SCR in LD5760. Fig. 22 shows the equivalent Hi-V structure circuit of LD5760. So that LD5760 is more capable to sustain negative voltage than similar products. However, a 10K resistor is recommended to add in the Hi-V path to play as a current limit resistor as a negative voltage is applied. VCC GND Other HV process with parasitic SCR HV Negative-triggered Parasitic SCR. Small negative spike on HV pin will cause the latchup between Vcc and GND. 0V Fig. 21 VCC GND Parasitic effect between HV, Vcc and GND HV Current limit resistor for Preventing damage from Negative voltage (recommended) 0V Fig. 22 Output Over Voltage Protection (CS Pin) - Auto Recovery An output overvoltage protection is implemented in the LD5760, as shown in Fig. 23 and 24. The auxiliary winding voltage is reflected to secondary winding and therefore the flat voltage on the CS pin is proportional to the output voltage. By sensing the auxiliary voltage via the divided resistors, LD5760 can sample this flat voltage level after some delay time to perform output over-voltage protection. This delay time is used to ignore the voltage ringing from leakage inductance of PWM transformer. The sampling voltage level is compared with internal threshold voltage VCSOVP. If the sampling voltage exceeds the OVP trip level, an internal counter starts counting subsequent OVP events. The counter has been added to prevent incorrect OVP detection which might occur during ESD or lightning events. However, if typically 10 cycles of subsequent |
|
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |