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TMP117MAIDRVT bảng dữ liệu(PDF) 4 Page - Texas Instruments

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tên linh kiện TMP117MAIDRVT
Giải thích chi tiết về linh kiện  High-Accuracy, Low-Power, Digital Temperature Sensor With SMBus- and I2C-Compatible Interface
PDF  49 Pages
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TMP117MAIDRVT bảng dữ liệu(HTML) 4 Page - Texas Instruments

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TMP117
SNOSD82A – JUNE 2018 – REVISED OCTOBER 2018
www.ti.com
Product Folder Links: TMP117
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
Over free-air temperature range unless otherwise noted
(1)
MIN
MAX
UNIT
Supply voltage
V+
–0.3
6
V
Voltage at
SCL, SDA, ALERT and ADD0
–0.3
6
V
Operating junction temperature, TJ
–55
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±1000
6.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
V+
Supply voltage
1.8
3.3
5.5
V
VI/O
SCL, SDA, ALERT and ADD0
0
5.5
V
TA
Operating free-air temperature
–55
150
°C
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
TMP117
UNIT
DRV (WSON)
6 PINS
RθJA
Junction-to-ambient thermal resistance
70.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
82.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
11.7
°C/W
RθJB
Junction-to-board thermal resistance
35.4
°C/W
ψJT
Junction-to-top characterization parameter
2.2
°C/W
ψJB
Junction-to-board characterization parameter
35.3
°C/W
MT
Thermal Mass
5.1
mJ/°C



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