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SILICON POWER TRANSISTORS

2SC4332, 2SC4332-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

Document No. D16430EJ1V0DS00 (1st edition)

Date Published October 2002 NS CP(K)

Printed in Japan

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The 2SC4332 and 2SC4332-Z are mold power transistors

developed for high-speed switching and features a very low

collector-to-emitter saturation voltage.

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage

power supply devices, as well as for high-current switching.

FEATURES

• Low collector saturation voltage

• Fast switching speed:

≤ 0.3

• High DC current gain

°°°°C)

Collector to Base Voltage

100

V

Collector to Emitter Voltage

60

V

Base to Emitter Voltage

7.0

V

Collector Current (DC)

5.0

A

Collector Current (pulse)

Note1

10

A

Base Current (DC)

2.5

A

Total Power Dissipation

°C)

15

W

Total Power Dissipation

°C)

1.0

W

Junction Temperature

150

°C

Storage Temperature

−55 to +150

°C

Notes 1. PW

≤ 10 ms, duty cycle ≤ 50%

2. Printing borard mounted

3. 7.5 mm

2

x 0.7 mm, ceramic board mounted

PACKAGE DRAWING (Unit: mm)

Electrode Connection

1. Base

2. Collector

3. Emitter

4. Fin (collector)