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SILICON TRANSISTOR

FA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

DATA SHEET

Document No. D16493EJ2V0DS00 (2nd edition)

Date Published February 2003 NS CP(K)

Printed in Japan

2002

FEATURES

• Compact package

• Resistors built-in type

• Complementary to FN4xxx

ORDERING INFORMATION

PART NUMBER

PACKAGE

FA4xxx

SC-59

Collector to Base Voltage

60

V

Collector to Emitter Voltage

50

V

Emitter to Base Voltage

5V

Collector Current (DC)

0.1

A

0.2

A

Total Power Dissipation

0.2

W

Junction Temperature

150

°C

Storage Temperature

–55 to +150

°C

Note PW

≤ 10 ms, Duty Cycle ≤ 50%

PART NUMBER

MARK

UNIT

PART NUMBER

MARK

UNIT

FA4A4M

AA1

10.0

10.0

k

Ω

FA4L4L

AK1

47.0

22.0

k

Ω

FA4F4M

AB1

22.0

22.0

k

Ω

FA4A4Z

AL1

10.0

k

Ω

FA4L4M

AC1

47.0

47.0

k

Ω

FA4F4Z

AM1

22.0

k

Ω

FA4L3M

AD1

4.7

4.7

k

Ω

FA4L4Z

AN1

47.0

k

Ω

FA4L3N

AE1

4.7

10.0

k

Ω

FA4F3M

AP1

2.2

2.2

k

Ω

FA4L3Z

AF1

4.7

k

Ω

FA4F3P

AQ1

2.2

10.0

k

Ω

FA4A3Q

AG1

1.0

10.0

k

Ω

FA4F3R

AR1

2.2

47.0

k

Ω

FA4A4P

AH1

10.0

47.0

k

Ω

FA4A4L

AS1

10.0

4.7

k

Ω

FA4F4N

AJ1

22.0

47.0

k

Ω

FA4L4K

AT1

47.0

10.0

k

Ω

PACKAGE DRAWING (Unit: mm)

0.95

0.3

0.95

2.9 ± 0.2

1.1 to 1.4

0 to 0.1

0.16

+0.1

–0.06

21

3

+0.1

–0.05

0.4

+0.1

–0.05

0.4

Marking

EQUIVALENT CIRCUIT

2

1

3

The mark

# shows major revised points.

#

#

PIN CONNECTION

1: Emitter

2: Base

3: Collector

#