CAT5116SIMSOP datasheet(3/8 Pages) CATALYST

3 / 8 page

Doc. No. 2118, Rev. J

CAT5116

NOTES:

(1) This parameter is tested initially and after a design or process change that affects the parameter.

(2) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC + 1V

(3) IW=source or sink

RELIABILITY CHARACTERISTICS

Symbol

Parameter

Test Method

Min

Typ

Max

Units

VZAP(1)

ESD Susceptibility

MIL-STD-883, Test Method 3015

2000

Volts

ILTH(1)(2)

Latch-Up

JEDEC Standard 17

100

TDR

Data Retention

MIL-STD-883, Test Method 1008

100

Years

NEND

Endurance

MIL-STD-883, Test Method 1003

1,000,000

Stores

Power Supply

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VCC

Operating Voltage Range

2.5

5.5

ICC1(3)

Supply Current (Increment)

VCC = 5.5V, f = 1MHz, IW=0

100

µA

VCC = 5.5V, f = 250kHz, IW=0

ICC2

Supply Current (Write)

Programming, VCC = 5.5V

VCC = 3V

500

µA

ISB1

Supply Current (Standby)

CS=VCC-0.3V

0.01

µA

D, INC=VCC-0.3V or GND

Symbol

Parameter

Conditions

Min

Typ

Max

Units

IIH

Input Leakage Current

VIN = VCC

µA

IIL

Input Leakage Current

VIN = 0V

-10

µA

VIH1

TTL High Level Input Voltage

4.5V

≤ VCC ≤ 5.5V

VCC

VIL1

TTL Low Level Input Voltage

0.8

VIH2

CMOS High Level Input Voltage

2.5V

≤ VCC ≤ 5.5V

VCC x 0.7

VCC + 0.3

VIL2

CMOS Low Level Input Voltage

-0.3

VCC x 0.2

Logic Inputs

DC ELECTRICAL CHARACTERISTICS: VCC = 2.5V to 5.5V unless otherwise specified.

ABSOLUTE MAXIMUM RATINGS

Supply Voltage

VCC to GND ....................................... -0.5V to +7V

Inputs

CS to GND ........................ -0.5V to VCC to +0.5V

INC to GND ....................... -0.5V to VCC to +0.5V

/D to GND ....................... -0.5V to VCC to +0.5V

RH to GND ......................... -0.5V to VCC to +0.5V

RL to GND ......................... -0.5V to VCC to +0.5V

RW to GND ........................ -0.5V to VCC to +0.5V

Operating Ambient Temperature ........ -40

°C to +85°C

Junction Temperature (10 secs) ..................... +150

°C

Storage Temperature ...................................... +150

°C

Lead Soltering (10 sec max) ........................... +300

°C

*Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Absolute Maximum

Ratings are limited values applied individually while other param-

eters are within specified operating conditions, and functional

operation at any of these conditions is NOT implied. Device

performance and reliability may be impaired by exposure to

absolute rating conditions for extended periods of time.

CAT5116SIMSOP bảng dữ liệu(PDF) 3 Page - Catalyst Semiconductor

CAT5116SIMSOP bảng dữ liệu(HTML) 3 Page - Catalyst Semiconductor

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL