PAM2306D

Document number: DS36394 Rev. 2 - 2

3 of 12

www.diodes.com

December 2014

© Diodes Incorporated

PAM2306D

A Product Line of

Diodes Incorporated

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device

reliability. All voltages are with respect to ground.

Parameter

Rating

Unit

Input Voltage

-0.3 to +6.5

V

EN1, FB1, LX1, EN2, FB2 and LX2 Pin Voltage

V

Maximum Junction Temperature

150

°C

Storage Temperature Range

-65 to +150

°C

Soldering Temperature

260, 10sec

°C

Parameter

Rating

Unit

Supply Voltage

2.5 to 5.5

V

Ambient Temperature Range

-40 to +85

°C

Junction Temperature Range

-40 to +125

°C

Thermal Information

Parameter

Symbol

Package

Maximum

Unit

Thermal Resistance (Junction to Ambient)

W-DFN3x3-12

60

°C/W

Thermal Resistance (Junction to Case)

W-DFN3x3-12

8.5

°C/W

Power Dissipation

W-DFN3x3-12

1.66

W

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Input Voltage Range

2.5

5.5

V

Regulated Feedback Voltage

Io = 100mA

0.588

0.6

0.612

V

Reference Voltage Line Regulation

0.3

%/V

Regulated Output Voltage Accuracy

-3

+3

%

Peak Indictor Current

1.5

A

Output Voltage Line Regulation

LNR

0.2

0.5

%/V

Output Voltage Load Regulation

LDR

1.5

%

Quiescent Current (per channel)

No load

40

70

µA

Shutdown Current (per channel)

0.1

1

µA

Oscillator Frequency

1.2

1.5

1.8

MHz

500

kHz

Drain-Source On-State Resistance

P MOSFET

0.30

0.45

Ω

N MOSFET

0.35

0.50

Ω

SW Leakage Current (per channel)

±0.01

1

µA

EN Threshold High

1.5

V

EN Threshold Low

0.3

V

EN Leakage Current

±0.01

µA

Over Temperature Protection

OTP

150

°C

OTP Hysteresis

OTH

30

°C