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UMD9112G-S08-R bảng dữ liệu(PDF) 4 Page - Unisonic Technologies

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UMD9112
Preliminary
CMOS IC
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
www.unisonic.com.tw
QW-R109-042.a
ABSOLU T E M AX I M U M RAT I N G (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Maximum Logic and Control Supply Voltage
VCC
6.5
V
Maximum Output Supply Voltage
VDD
6.5
V
Maximum External Output Voltage
VOUT
VDD
V
Maximum External Input Voltage
VIN
VCC
V
Peak Output Current/Channel
IOUT_PEAK
2.5
A
Junction Temperature
TJ
+150
°C
Operational Temperature Range
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Maximum power dissipation at different ambient can be obtained from the following formula
PD=(TJ-TA)/
θJA.
Where TJ is junction temperature with the circuit working, and TA is the ambient temperature with the
circuit working.
3. Method of calculation of circuit power dissipation
P=I
2×R
Where P is circuit power dissipation, I is continuous output current, and R is circuit output on-resistance.
Circuit power dissipation P must be smaller than maximum power dissipation PD.
T H ERM AL DAT A
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
143
°C/W
RECOM M EN DED OPERAT I ON AL CON DI T I ON S (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Maximum Logic and Control Supply Voltage
VCC
5.0
V
Maximum Output Supply Voltage
VDD
6.0
V
Note: Logic control power supply VCC and power supply VDD are fully separate internally, and can supply electricity
separately.
ELECT RI CAL CH ARACT ERI ST I CS (TA=25°C, VCC=3V, VDD =3V unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC Standby Current
ICCST
0
10
μA
VDD Standby Current
IVDDST
INA=INB=L, VDD=VCC=6V
0
10
μA
VCC Static Supply Current
ICC
INA=H, INB=L or INA=L,
INB=H or INA=H, INB=H
0.3
1.0
mA
VDD Static Supply Current
IVDD
INA=H, INB=L or INA=L,
INB=H or INA=H, INB=H
0.1
1.5
mA
Input High Level
VINH
0.8×VCC
V
Input Low Level
VINL
0.2×VCC
V
Output Resistance
RON
IO=±200mA
0.6
0.9
Ω
Spark-Killing Diode Leakage
Current
IDLEAK
100
μA
Spark-Killing Diode Voltage
VD
IOUT=400mA
0.9
V
Protection Temperature
TSD
150
°C
TSD hysteresis
TSDH
30
°C



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