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DGS

15-018CS

DGSK 32-018CS

IXYS reserves the right to change limits, Conditions and dimensions.

V

RRM

= 180 V

I

DC

= 24 A

C

Gallium Arsenide Schottky Rectifier

Second generation

Data according to IEC 60747 and per diode unless otherwise specified

Features

GaAs Schottky Diode with Enhanced

Barrier Height:

to additional injection of minority carriers

- low junction capacity of GaAs diode

independent from temperature

- short and low reverse recovery current

peak due to short lifetime of minority

carriers

- soft turn off

Surface Mount Packages:

Topologies

Applications

Switched Mode Power Supplies:

with:

for use e. g. in:

Symbol

Conditions

Characteristic Values

min.

typ.

max.

V

F

I

T

25°C

1.25

1.5

V

I

T

1.0

V

I

R

V

25°C

0.25 mA

V

0.25

mA

I

RM

I

-di

1.1

A

t

rr

V

T

23

ns

C

J

V

T

21

pF

R

thJC

4.4 K/W

Symbol

Conditions

Maximum Ratings

V

RRM/RSM

180

V

I

FAV

T

°C; DC

24

A

I

FAV

T

°C; DC

15

A

I

FSM

T

80

A

P

tot

T

°C34

W

Diode

Component

Symbol

Conditions

Maximum Ratings

T

VJ

-55...+175

°C

T

stg

-55...+150

°C

Symbol

Conditions

Characteristic Values

min.

typ.

max.

Weight

TO-252

0.3

g

TO-263

2

g

A

TO-252 AA

A

TAB

Type

Marking on product

Circuit

Package

DGS 15-018CS

15A180AS

DGSK 32-018CS

DGSK 32-018CS

Common cathode

ACA

AC

Single

TO-263 AB

A

A

TAB

A = Anode, TAB = Cathode