2N7000 datasheet(1/2 Pages) SECELECTRONICS

tên linh kiện	2N7000

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Power MOSFET

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nhà sản xuất	SECELECTRONICS [SEC Electronics Inc.]

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Elektronische Bauelemente

2N7000

0.2A , 60V , RDS(ON) 5

N-Channel Enhancement Mode Power MOSFET

10-Nov-2015 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

2N

7000

021

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



High density cell design for low RDS(ON)



Voltage controlled small signal switch



Rugged and reliable



High saturation current capability

APPLICATIONS



Load switch for portable devices



DC/DC converter

MARKING

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

60

V

Continuous Drain Current

ID

0.2

A

Power Dissipation

PD

0.625

W

Thermal Resistance from Junction to Ambient

RθJA

200

°C / W

Operating Junction and Storage Temperature Range

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

V(BR)DSS

60

-

V

VGS=0, ID=10μA

Gate Threshold Voltage

1

VGS(th)

0.8

-

3

V

VDS=VGS, ID=1mA

Gate-Source Leakage Current

IGSS

-

±10

nA

VDS=0, VGS= ±15V

Drain-Source Leakage Current

IDSS

-

1

μAVDS=60V, VGS=0

On-State Drain Current

ID(ON)

75

-

mA VDS=10V, VGS=4.5V

-

6

VGS=4.5V, ID=75mA

Static Drain-Source On-Resistance

1

RDS(ON)

-

5

Ω

VGS=10V, ID=500mA

Forward Transconductance

1

gfs

100

-

mS VDS=10V, ID=200mA

-

0.45

VGS=4.5V, ID=75mA

Drain-Source On-Voltage

1

VDS(ON)

-

2.5

V

VGS=10V, ID=500mA

Input Capacitance

2

Ciss

-

60

-

Output Capacitance

2

Coss

-

25

-

Reverse Transfer Capacitance

2

Crss

-

5

-

pF

VGS=0

VDS=25V

f=1MHz

Turn-on Delay Time

2

Td(on)

-

10

-

Turn-off Delay Time

2

Td(off)

-

10

-

nS

VDD=15V, VGEN=10V

RL=30Ω, RG=25Ω, ID=500mA

Notes:

1.

Pulse Test.

2.

These parameters have no way to be verified.

TO-92



G



S



D



Source



Gate



Drain

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.70

F

0.30

0.51

B

4.30

4.70

G

1.27 TYP.

C

12.70

14.5

H

1.10

1.40

D

3.30

3.81

J

2.42

2.66

E

0.36

0.56

Số phần tương tự - 2N7000

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	2N7000	77Kb / 4P	CASE 29-04, STYLE 22 TO-92 (TO-226AA)
NXP Semiconductors	2N7000	76Kb / 12P	N-channel enhancement mode vertical D-MOS transistor April 1995
Supertex, Inc	2N7000	30Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FET
Transys Electronics	2N7000	288Kb / 3P	N-CHANNEL-ENHANCEMENT
Vishay Siliconix	2N7000	51Kb / 5P	N-Channel 60-V (D-S) MOSFET 16-Jul-01

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