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74FCT16543CTPVG8 bảng dữ liệu(PDF) 3 Page - Integrated Device Technology |
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74FCT16543CTPVG8 bảng dữ liệu(HTML) 3 Page - Integrated Device Technology |
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3 / 7 page ![]() 3 IDT74FCT16543AT/CT FASTCMOS16-BITLATCHEDTRANSCEIVER INDUSTRIALTEMPERATURERANGE Symbol Parameter Test Conditions(1) Min. Typ.(2) Max. Unit IO Output Drive Current VCC = Max., VO = 2.5V(3) –50 — –180 mA VOH Output HIGH Voltage VCC = Min. IOH = –3mA 2.5 3.5 — V VIN = VIH or VIL IOH = –15mA 2.4 3.5 — V IOH = –32mA(4) 23 — V VOL OutputLOWVoltage VCC = Min. IOL = 64mA — 0.2 0.55 V VIN = VIH or VIL IOFF Input/OutputPowerOffLeakage(5) VCC = 0V, VIN = or VO ≤ 4.5V — — ±1 µA Symbol Parameter Test Conditions(1) Min. Typ.(2) Max. Unit VIH Input HIGH Level Guaranteed Logic HIGH Level 2 — — V VIL Input LOW Level Guaranteed Logic LOW Level — — 0.8 V IIH Input HIGH Current (Input pins)(5) VCC = Max. VI = VCC —— ±1 µ A Input HIGH Current (I/O pins)(5) —— ±1 IIL InputLOWCurrent(Inputpins)(5) VI = GND — — ±1 Input LOW Current (I/O pins)(5) —— ±1 IOZH HighImpedanceOutputCurrent VCC = Max. VO = 2.7V — — ±1 µ A IOZL (3-StateOutputpins)(5) VO = 0.5V — — ±1 VIK Clamp Diode Voltage VCC = Min., IIN = –18mA — –0.7 –1.2 V IOS Short Circuit Current VCC = Max., VO = GND(3) –80 –140 –250 mA VH Input Hysteresis — — 100 — mV ICCL Quiescent Power Supply Current VCC = Max — 5 500 µ A ICCH VIN = GND or VCC ICCZ DC ELECT RI CAL CH ARACT ERI ST I CS OV ER OPERAT I N G RAN GE Following Conditions Apply Unless Otherwise Specified: Industrial: TA = –40°C to +85°C, VCC = 5.0V ±10% NOTES: 1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient. 3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second. 4. Duration of the condition can not exceed one second. 5. This test limit for this parameter is ±5µA at TA = –55°C. OU T PU T DRI V E CH ARACT ERI ST I CS |
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