Elektronische Bauelemente

SCG3134K

-Channel Plastic-Enhancement MOSFET

23-Apr-2018 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameters

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

20

-

-

V

Gate-Threshold Voltage

3

0.35

-

1.1

V

Gate-Body Leakage Current

-

-

±20

µA

Zero Gate Voltage Drain Current

-

-

1

µA

-

-

380

-

-

450

Drain-Source On-State Resistance

3

-

-

800

m

Forward Transconductance

1

-

-

S

Turn-on Delay Time

-

6.7

-

Rise Time

-

4.8

-

Turn-off Delay Time

-

17.3

-

Fall Time

-

7.4

-

nS

Input Capacitance

-

120

-

Output Capacitance

-

20

-

Reverse Transfer Capacitance

-

15

-

pF

f=1MHz

Drain-Source Diode Characteristics

Drain-Source Diode Forward Voltage

3

-

-

1.2

V

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

Pulse Test: Pulse Width≦300µs, Duty Cycle≦0.5%.