NLSF457

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3

MAXIMUM RATINGS

Symbol

Parameter

Ratings

Unit

DC Supply Voltage

−0.5 to +6.5

V

DC Input Voltage

−0.5 to +6.5

V

DC Output Voltage

Active−Mode (High or Low State)

V

Tri−State Mode (Note 1)

−0.5 to +6.5

−0.5 to +6.5

DC Input Diode Current

−50

mA

DC Output Diode Current

−50

mA

DC Output Source/Sink Current

±50

mA

DC Supply Current Per Supply Pin or Ground Pin

±100

mA

Storage Temperature Range

−65 to +150

°C

Lead Temperature, 1 mm from Case for 10 Seconds

260

°C

Junction Temperature Under Bias

+150

°C

Thermal Resistance (Note 2)

UDFN8

150

°C/W

Power Dissipation in Still Air at 125

°C

UDFN8

833

mW

MSL

Moisture Sensitivity

Level 1

Flammability Rating

Oxygen Index: 28 to 34

UL 94 V−0 @ 0.125 in

ESD Withstand Voltage (Note 3)

Charged Device Model

> 2000

V

Human Body Model

> 1000

Latchup Performance (Note 4)

±100

mA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Applicable to devices with outputs that may be tri−stated.

2. Measured with minimum pad spacing on an FR4 board, using 10mm – by – 1inch, 2 ounce copper trace no air flow.

3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to

EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A.

4. Tested to EIA/JESD78 Class II.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

Positive DC Supply Voltage

1.65

5.5

V

Digital Input Voltage

0

5.5

V

Output Voltage

Active Mode (High or Low State)

0

V

Tri−State Mode (Note 1)

0

5.5

0

5.5

Operating Free−Air Temperature

−55

+125

°C

Input Transition Rise or Fall Rate

0

20

nS/V

0

20

0

10

0

5

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.