ESH1DM datasheet(1/4 Pages) TSC

tên linh kiện	ESH1DM

Giải thích chi tiết về linh kiện	1A, 200V - 600V Surface Mount Ultrafast Rectifiers

PDF	4 Pages

Scroll/Zoom	100%

nhà sản xuất	TSC [Taiwan Semiconductor Company, Ltd]

Trang chủ	http://www.taiwansemi.com

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ESH1DM - ESH1JM

CREAT BY ART

- Very low profile - typical height of 0.68mm

- Reduce switching and conduction loss

- Ideal for automated placement

- Ultrafast recovery times for high frequency

- Halogen-free according to IEC 61249-2-21

ESH1DM to ESH1JM is ideal device for the compact space PCB design.

Specially as boost diode in power factor correction circuitry.

The device is also intended for use as a free wheeling diode in power supplies

For chargers, LED lighting, and other power switching applications.

Molding compound: UL flammability classification rating 94V-0

Part no. with suffix "H" means AEC-Q101 qualified

Packing code with suffix "G" means green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

SYMBOL

UNIT

VRRM

V

IF(AV)

A

trr

ns

CJ

pF

TJ

°C

TSTG

°C

Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A

Note 4: Thermal resistance RθJA - from junction to ambient, RθJM - and junction to mount

Version: C1602

Maximum reverse recovery time (Note 2)

25

ESH1JM

D3

D5

D7

400

600

200

V

Maximum average forward rectified current

TYP

MAX

1

50

Note 1: Pulse test with PW=300μs, 1% duty cycle

-55 to +150

Taiwan Semiconductor

TYP

MAX

1.25

1.5

Marking code

Maximum instantaneous forward voltage (Note 1)

@ 1 A

VF

-55 to +150

Typical junction capacitance (Note 3)

3

Typical thermal resistance (Note 4)

RθJM

RθJA

40

92

Case:

Micro SMA

Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V

Maximum reverse current @ rated VR

TJ=25 °C

TJ=125 °C

IR

μA

-

5

°C/W

Operating junction temperature range

Storage temperature range

Micro SMA

A

APPLICATION

ESH1DM

ESH1GM

1

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

IFSM

15

MECHANICAL DATA

1A, 200V - 600V Surface Mount Ultrafast Rectifiers

FEATURES

Moisture sensitivity level: level 1, per J-STD-020

Maximum repetitive peak reverse voltage

Polarity:

Indicated by cathode band

Weight:

6mg (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

PARAMETER

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

Số phần tương tự - ESH1DM

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Taiwan Semiconductor Co...	ESH1DMH	505Kb / 5P	1A, 200V Ultra Fast Surface Mount Rectifier Version: B2110

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Mô tả tương tự - ESH1DM

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ESH1DM bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

ESH1DM bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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