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MCP6041 bảng dữ liệu(PDF) 12 Page - Microchip Technology

tên linh kiện MCP6041
Giải thích chi tiết về linh kiện  600 nA, Rail-to-Rail Input/Output Op Amps
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Trang chủ  http://www.microchip.com
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MCP6041 bảng dữ liệu(HTML) 12 Page - Microchip Technology

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MCP6041/2/3/4
DS21669B-page 12
2002 Microchip Technology Inc.
macro model and bench testing to adjust RISO until the
frequency response peaking is reasonable. Use the
smallest reasonable value.
FIGURE 3-2:
Amplifier circuit for heavy
capacitive loads.
3.6
The MCP6043 Chip Select (CS)
Option
The MCP6043 is a single amplifier with a chip select
(CS) option. When CS is pulled high, the supply current
drops to 20 pA (typ) and goes through the CS pin to
VSS. When this happens, the amplifier is put into a high
impedance state. By pulling CS low, the amplifier is
enabled. If the CS pin is left floating, the amplifier will
not operate properly. Figure 3-3 shows the output volt-
age and supply current response to a CS pulse.
FIGURE 3-3:
Timing Diagram for the CS
function on the MCP6043 op amp.
3.7
Layout Considerations
Good PC board layout techniques will help you achieve
the performance shown in the specs and Typical Per-
formance Curves. It will also assist in minimizing Elec-
tro-Magnetic Compatibility (EMC) issues.
3.7.1
SURFACE LEAKAGE
In applications where low input bias current is critical,
PC board surface leakage effects and signal coupling
from trace to trace need to be considered.
Surface leakage is caused by a difference in voltage
between traces, combined with high humidity, dust or
other contamination on the board. Under low humidity
conditions, a typical resistance between nearby traces
is 1012
Ω. A 5 V difference would cause 5 pA of current
to flow; this is greater than the input current of the
MCP6041/2/3/4 family at 25°C (1 pA, typ).
The simplest technique to reduce surface leakage is
using a guard ring around sensitive pins (or traces).
The guard ring is biased at the same voltage as the
sensitive pin or trace. Figure 3-4 shows an example of
a typical layout.
FIGURE 3-4:
Example of Guard Ring
layout.
Circuit schematics for different guard ring implementa-
tions are shown in Figure 3-5. Figure 3-5A biases the
guard ring to the input common mode voltage, which is
most effective for non-inverting gains, including unity
gain. Figure 3-5B biases the guard ring to a reference
voltage (VREF, which can be ground). This is useful for
inverting gains and precision photo sensing circuits.
FIGURE 3-5:
Two possible guard ring
connection strategies to reduce surface leakage
effects.
VIN
RISO
VOUT
MCP604X
CL
VIL
Hi-Z
tON
VIH
CS
tOFF
VOUT
IVDD
20 pA, typ
Hi-Z
IVSS
ICS
5 pA, typ
5pA, typ
20 pA, typ
0.6 µA, typ
5 pA, typ
0.6 µA, typ
5pA, typ
Guard Ring
VSS
IN-
IN+
VREF
MCP604X
Figure 3-5A
Figure 3-5B
VDD
VREF
MCP604X
VDD



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