IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

6,583,505

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

6

10

S

C

iss

4000

pF

C

oss

V

GS

= 0 V, V

310

pF

C

rss

70

pF

t

d(on)

21

50

ns

t

r

V

GS

= 10 V, V

33

50

ns

t

d(off)

R

62 100

ns

t

f

32

50

ns

Q

g(on)

122 155

nC

Q

gs

V

GS

= 10 V, V

30

45

nC

Q

gd

50

80

nC

R

thJC

0.42

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

10N100

10

A

12N100

12

A

I

SM

Repetitive;

10N100

40

A

pulse width limited by T

JM

12N100

48

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

T

250

ns

T

400

ns

Q

RM

T

µC

T

µC

I

RM

T

A

T

A

I

-di/dt = 100 A/

µs,

V

TO-268 Outline

Min Recommended Footprint

IXFT 10N100

IXFT 12N100